View TPC8A01_4872168.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TPC8A01
Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS)
TPC8A01
DC-DC CONVERTER Notebook PC Portable Machines and Tools
* * * * * * * * Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage: VDSF=0.6V(Max.) Small footprint due to small and thin package. High Speed Switching.(Q1) Small Gate Charge.(Q1): Qg17nC(Typ.) Low drain-source ON resistance(Q2) RDS (ON) = 13 m (typ.) High forward transfer admittance(Q2): |Yfs| = 11 S (typ.) Low leakage current. (Q1): IDSS = 10 A(Max.) (VDS = 30 V) (Q2): IDSS = 100 A(Max.) (VDS = 30 V) Enhancement-mode : (Q1) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA) : (Q2) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)
1 SOURCE 4 GATE 5, 6DRAIN/CATHOUDE 7, 8 DRAIN 2 GATE
Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD(1) PD(2) PD(1) PD(2) EAS IAR EAR Tch Tstg Rating Q1 30 30 20 6 24 1.5 1.1 W 0.75 0.45 46.8 (Note 4a) 6 0.11 150 -55~150 93.9 (Note 4b) 8.5 mJ A mJ C C Q2 30 30 20 8.5 34 Unit V V V A
3 SURCE/ANODE
JEDEC JEITA TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Drain power Single-device operation dissipation (Note 3a) (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) Channel temperature Storage temperature range
Circuit Configuration
8 7 6 5
1 Q1
2
3 Q2
4
(Includes Schottky Barrier Diode)
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and not proper operating temprature or voltage may cause thermalrun. Please take forward and reverse loss into consideration when you design.
1
2006-11-16
TPC8A01
Thermal Characteristics
Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit
Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 2a)
114 C/W 167
Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b)
278
Marking
TPC8A01
Type Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: a) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 6.0 A b) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 8.5 A Note 5: Repetitive rating; pulse width limited by max channel temperature. Note 6: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits)
Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
2
2006-11-16
TPC8A01
Q1 Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time tf toff Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V ID = 3.0 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VDS =10 V, ID = 3.0 A Min Typ. Max Unit

30 15 1.1

23 18 9 940 130 390 17 25 4 21 17 10 1.9 4.1 6
10 -10
2.3 30 25
A A
V V m S

4.5

VDD 24 V, VGS = 10 V,ID = 6.0 A -
pF
4.7
RL = 5.0
ns
VDD 15 V - Duty < 1%, tw = 10 s = VDD 24 V, VGS = 10 V,ID = 6.0 A -

nC
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge
Qg VDD 24 V, VGS = 5 V,ID = 6.0 A - Qgs1 Qgd

Gateswitch charge
Qsw
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition Min Typ. Max 24 Unit A V
IDR = 6.0 A, VGS = 0 V

-1.2
3
2006-11-16
TPC8A01
Q2 (Includes Schottky Barrier Diode) Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 10 V,ID = 8.5 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V ID = 4.3 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 4.3 A VGS = 10 V, ID = 4.3 A VDS = 10 V, ID = 4.3 A Min Typ. Max Unit

30 15 1.1

16 13 11 2295 360 510 8 17 15 52 49 27 3.7 10.8 14.5
10
10
A A
V V m S

2.3 21 18

5.5

pF
4.7
RL = 3.5
ns
VDD 15 V - Duty < 1%, tw = 10 s = VDD 24 V, VGS = 10 V,ID = 8.5 A - VDD 24 V, VGS = 5 V,ID = 8.5 A -

nC
Gateswitch charge
Qsw
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition Min Typ. Max 34 Unit A V
IDR = 1.0 A, VGS = 0 V IDR = 8.5 A, VGS = 0 V

-0.5
-0.6 -1.2
4
2006-11-16
TPC8A01
Q1
ID - VDS
10
10 6 4 3.5 3.2 3.1
ID - VDS
Common source Ta = 25C Pulse test
20
10 8 6 4 3.5 3.3
Common source Ta = 25C Pulse test
8
8
16
3.0
(A)
(A)
3.2
ID
ID Drain current
2.9
6
12
3.1
Drain current
4
2.8
8
3.0 29
2.7
2
2.6
4
2.8
0 0 0.2 0.4 0.6 0.8
VGS=2.5V
VGS=2.6V
0 0 1 2 3 4 5
1
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
12
VDS - VGS
0.6
Common source VDS = 10 V Pulse test Common source Ta = 25C Pulse test
(A)
VDS Drain-source voltage
T=-55
(V)
0.5
8
25
0.4
Drain current
ID
100 4
0.3
0.2
ID=6A
0.1
3
1.5
0 0 1 2 3 4 5 6
0 0 2 4 6 8 10 12
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
100
(S)
Common source VDS = 10 V Pulse test
RDS (ON) - ID
1000
Common source Ta = 25C Pulse test
T=-55
Forward transfer admittance Yfs
10
Drain-source ON resistance RDS (ON) (m)
25
100
100
VGS=4.5V
1
10
10
0.1 0.1 1
Drain current
1
10
ID (A)
100
0.1
1
10
100
Drain current
ID (A)
5
2006-11-16
TPC8A01
Q1
RDS (ON) - Ta
50 100
IDR - VDS
Drain reverse current IDR (A)
Drain-source ON resistance RDS (ON) (m)
40
10
5
3
30 VGS=4.5V 20
ID=6A
3 1.5
10
1 0
ID=1.5,3,6A 10V 10
VGS=-1V
1
Common source Pulse test
0 -80 -40 0 40 80 120 160 0.1 0
- 0.2 - 0.4 - 0.6 - 0.8
Common source Ta = 25C Pulse test
-1 -1.2
Ambient temperature
Ta
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
Vth - Ta
3
Common source VDS = 10 V ID = 1 mA Pulse test
10000
Ciss
(pF)
1000
Vth (V) Gate threshold voltage
Coss
100
2
Capacitance
C
Crss
10
Common source Ta = 25C f = 1MHz VGS = 0 V
1
0 -80 -40 0 40 80 120 160
1 0.1 1
Drain-source voltage
10
VDS (V)
100
Ambient temperature
Ta
(C)
PD - Ta
2
Device mounted on a glass-epoxy board (a)
Dynamic input/output characteristics
40
Common source ID = 6 A Ta = 25C Pulse test
40
1.6 (1)
Drain power dissipation
Drain-source voltage
20 12 6 10 VDD=24V VGS 0
20
0.8 (3) (4) 0.4
10
0 0
0 0 5 10 15 20 25 30
40
80
120
160
200
Ambient temperature
Ta
(C)
Total gate charge Qg (nC)
6
2006-11-16
Gate-source voltage
1.2 (2)
(Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
(W)
(V)
PD
VDS
30 VDS
30
VGS (V)
TPC8A01
Q1
rth - tw
1000
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
500
(4) (3) (2) (1)
Normalized transient thermal impedance rth (C/W)
100
50 30
10 5 3
1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(S)
Safe operating area
ID max (pulse) * Single-device value at dual operation (Note 3b) 1 ms *
ID
(A)
Drain current
10 ms *
* Single pulse
Ta = 25C VDSS max
Curves must be derated linearly with increase in temperature.
Drain-source voltage
VDS (V)
7
2006-11-16
TPC8A01
Q2(Includes Schottky Barrier Diode)
ID - VDS
10
10 8 6 4 3.5 3 2.5
ID - VDS
20
10 8 6 4 3 2.8
2.6
Common source Ta = 25C Pulse test
2.7
8
16
(A)
ID
ID
(A)
12
6
2.4
2.6
Drain current
Drain current
2.5
4
2.3 2.2
8
2.4
2
4
2.3 2.2
0 0 0.2
Common source Ta = 25C Pulse test
2.1 VGS=2.0V
VGS=2.1V
0
0.4
0.6
0.8
1
0
1
2
3
4
5
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
20
VDS - VGS
0.6
Common source Ta = 25C Pulse test
16
(A)
VDS Drain-source voltage
25 T=-55
(V)
100
0.5
0.4
ID Drain current
12
0.3
8
0.2
ID=8.5A
4
Common source VDS = 10 V Pulse test
0.1
4.3
2.1
0 0 1 2 3
0
5 6
4
0
2
4
6
8
10
12
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
100
(S)
1000
RDS (ON) - ID
Common source Ta = 25C Pulse test
T=-55
25 100
Forward transfer admittance Yfs
Drain-source ON resistance RDS (ON) (m)
10
100
VGS=4.5V
1
10
VGS=10V
0.1 0.1
Common source VDS = 10 V Pulse test
1
1 10 Drain current ID (A)
100
0.1
1
10
100
Drain current
ID (A)
8
2006-11-16
TPC8A01
Q2(Includes Schottky Barrier Diode)
RDS (ON) - Ta
50
IDR - VDS
Common source Pulse test
100
Drain reverse current IDR (A)
Drain-source ON resistance RDS (ON) (m)
40
5 10 3
10
30 ID=8.5A 20
4.3
1
2.1 VGS=4.5V ID=2.1/4.3/8.5A
VGS=0V
1
10
VGS=10V
0 -80 -40 0 40 80 120 160
Common source Ta = 25C Pulse test
0.1 0
- 0.2 - 0.4 - 0.6 - 0.8 -1 - 1.2
Ambient temperature
Ta
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
Vth - Ta
3
Common source VDS = 10 V ID = 1 mA Pulse test
10000
Ciss
(pF)
Vth
Coss
1000
Crss
(V) Gate threshold voltage
2 1 0 -80
Capacitance
C
100
10
1 0.1 1
Drain-source voltage
Common source Ta = 25C f = 1MHz VGS = 0 V
10
VDS (V)
100
-40
0
40
80
120
160
Ambient temperature
Ta
(C)
PD - Ta
2
Device mounted on a glass-epoxy board (a)
Dynamic input/output characteristics
40
Common source ID = 8.5 A Ta = 25C Pulse test
40
1.6 (1)
Drain power dissipation
Drain-source voltage
20 12 6 10 VGS VDD=24V
20
0.8 (3) (4) 0.4
10
0 0
40
80
120
160
200
0 0 10 20 30 40 50 60 70 80 90
0 100
Ambient temperature
Ta
(C)
Total gate charge Qg (nC)
9
2006-11-16
Gate-source voltage
1.2 (2)
(Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
(W)
(V)
PD
VDS
30 VDS
30
VGS (V)
TPC8A01
Q2(Includes Schottky Barrier Diode)
rth - tw
1000
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
Normalized transient thermal impedance rth (C/W)
500
(4) (3) (2) (1)
100
50 30
10 5 3
1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(S)
Safe operating area
100
ID max (pulse) *
Single-device value at dual operation (Note 3b) 1 ms *
(A)
10
Drain current
ID
10 ms *
1
* Single pulse
Ta = 25C VDSS max
1 10 100
Curves must be derated linearly with increase in temperature.
0.1 0.01 0.1
Drain-source voltage
VDS (V)
10
2006-11-16
TPC8A01
Q2 (VGS=0V)
IDR - VDSF IDSS - Tch
100000
Pulse test
(typ.)
10
IDR (A) (A)
1
Drain reverse current
Drain cut-OFF current
75 25 0.1
IDSS
Tch=125
10000
20
1000
VDS = 30 V 10
100
5
Pulse test
0.01 0 0.2 0.4 0.6
VDS (V)
10
0.8
1
0
20
40
60
80
100
120
140
160
Drain-source voltage
Channel temperature
Tch
(C)
Tch - VDS
160
Pulse test
140
() Tch Channel temperature
120
100
80
60
40
20
0 0 10 20 30 40
Drain-source voltage
VDS (V)
11
2006-11-16
TPC8A01
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
12
2006-11-16

▲Up To Search▲

Price & Availability of TPC8A01

	To Download TPC8A01 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .